Invention Grant
- Patent Title: Overlay mark enhancement feature
- Patent Title (中): 叠加标记增强功能
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Application No.: US12854660Application Date: 2010-08-11
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Publication No.: US08148232B2Publication Date: 2012-04-03
- Inventor: Meng-Wei Chen , Chi-Chuang Lee , Chung-Hsien Lin
- Applicant: Meng-Wei Chen , Chi-Chuang Lee , Chung-Hsien Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/70
- IPC: H01L21/70

Abstract:
Methods and apparatuses for alignment are disclosed. An exemplary method includes providing a substrate having a device region and an alignment region; forming a first material layer over the substrate; forming a device feature and a dummy feature in the first material layer, wherein the device feature is formed in the device region and the dummy feature is formed in the alignment region; forming a second material layer over the first material layer; and forming an alignment feature in the second material layer, the alignment feature being disposed over the dummy feature in the alignment region. The device feature has a first dimension and the dummy feature has a second dimension, the second dimension being less than a resolution of an alignment mark detector.
Public/Granted literature
- US20120038021A1 OVERLAY MARK ENHANCEMENT FEATURE Public/Granted day:2012-02-16
Information query
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