Invention Grant
US08148230B2 Method of making damascene diodes using selective etching methods
有权
使用选择性蚀刻方法制造镶嵌二极管的方法
- Patent Title: Method of making damascene diodes using selective etching methods
- Patent Title (中): 使用选择性蚀刻方法制造镶嵌二极管的方法
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Application No.: US12656306Application Date: 2010-01-25
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Publication No.: US08148230B2Publication Date: 2012-04-03
- Inventor: Vance Dunton , Raghuveer S. Makala , Michael Chan
- Applicant: Vance Dunton , Raghuveer S. Makala , Michael Chan
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: The Marbury Law Group, PLLC
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A method of making a semiconductor device includes providing an insulating layer containing a plurality of openings, forming a first conductivity type semiconductor layer in the plurality of openings, forming a second conductivity type semiconductor layer over the first conductivity type semiconductor layer in the plurality of openings, and selectively etching the second conductivity type semiconductor layer using an upper surface of the first conductivity type semiconductor layer as a stop to form a recess in the plurality of openings.
Public/Granted literature
- US20110014771A1 Method of making damascene diodes using selective etching methods Public/Granted day:2011-01-20
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