Invention Grant
US08148225B2 Fully-depleted (FD)(SOI) MOSFET access transistor and method of fabrication
有权
全耗尽（FD）（SOI）MOSFET存取晶体管及其制造方法
- Patent Title: Fully-depleted (FD)(SOI) MOSFET access transistor and method of fabrication
- Patent Title (中): 全耗尽（FD）（SOI）MOSFET存取晶体管及其制造方法
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Application No.: US12401555Application Date: 2009-03-10
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Publication No.: US08148225B2Publication Date: 2012-04-03
- Inventor: Hongmei Wang , John K. Zahurak
- Applicant: Hongmei Wang , John K. Zahurak
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A fully-depleted (FD) Silicon-on-Insulator (SOI) MOSFET access transistor comprising a gate electrode of a conductivity type which is opposite the conductivity type of the source/drain regions and a method of fabrication are disclosed.
Public/Granted literature
- US20090176338A1 FULLY-DEPLETED (FD)(SOI) MOSFET ACCESS TRANSISTOR AND METHOD OF FABRICATION Public/Granted day:2009-07-09
Information query
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