Invention Grant
- Patent Title: Circuit connection structure, method for producing the same and semiconductor substrate for circuit connection structure
- Patent Title (中): 电路连接结构及其制造方法以及用于电路连接结构的半导体衬底
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Application No.: US12064522Application Date: 2006-08-22
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Publication No.: US08148204B2Publication Date: 2012-04-03
- Inventor: Yuichi Kaneya , Toshiaki Tanaka , Toshiaki Itabashi
- Applicant: Yuichi Kaneya , Toshiaki Tanaka , Toshiaki Itabashi
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Hitachi Chemical Dupont Microsystems, Ltd.,Hitachi Chemical Company, Ltd.
- Current Assignee: Hitachi Chemical Dupont Microsystems, Ltd.,Hitachi Chemical Company, Ltd.
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Griffin & Szipl, P.C.
- Priority: JP2005-240204 20050822
- International Application: PCT/JP2006/316359 WO 20060822
- International Announcement: WO2007/023781 WO 20070301
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/48

Abstract:
A circuit connection structure that exhibits excellent adhesiveness between a heat resistant resin film and a circuit adhesive member, even under high temperature and high humidity, is provided by introducing a chemically stable functional group into the heat resistant resin film by additional surface treatment to improve adhesiveness. In a circuit connection structure, a semiconductor substrate and a circuit member are adhered by a circuit adhesive member sandwiched therewith. First circuit electrode on the semiconductor substrate and second circuit electrode on the circuit member are connected electrically by conductive particles in the circuit adhesive member. A surface modification is given to the semiconductor substrate by plasma treatment using gas containing nitrogen, ammonia and the like. Therefore, the heat resistant resin film on the semiconductor substrate and the circuit adhesive member are firmly adhered for a long period of time even under high temperature and high humidity.
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