Invention Grant
US08148180B2 Techniques of forming Ohmic contacts on GaN light emitting diodes
有权
在GaN发光二极管上形成欧姆接触的技术
- Patent Title: Techniques of forming Ohmic contacts on GaN light emitting diodes
- Patent Title (中): 在GaN发光二极管上形成欧姆接触的技术
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Application No.: US13184160Application Date: 2011-07-15
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Publication No.: US08148180B2Publication Date: 2012-04-03
- Inventor: Andrew J. Felker , Nicholas Andrew Vickers
- Applicant: Andrew J. Felker , Nicholas Andrew Vickers
- Applicant Address: US CA Fremont
- Assignee: Sorra, Inc.
- Current Assignee: Sorra, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method of forming ohmic contacts on a light emitting diode that features a surface treatment of a substrate includes exposing a surface of a p-type gallium nitride layer to an acid-containing solution and a buffered oxide etch process. A quantum well is formed in a gallium nitride substrate and a layer of p-type gallium nitride is deposited over the quantum well. The surface of the p-type gallium nitride is exposed to an acid-containing solution and then a buffered oxide etch process is performed to provide an etched surface. A metal stack including a layer of silver disposed between layers of platinum is then deposited.
Public/Granted literature
- US20120009705A1 Techniques of Forming Ohmic Contacts on GaN Light Emitting Diodes Public/Granted day:2012-01-12
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