Invention Grant
- Patent Title: Semiconductor device producing method
- Patent Title (中): 半导体器件制造方法
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Application No.: US12394883Application Date: 2009-02-27
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Publication No.: US08147646B2Publication Date: 2012-04-03
- Inventor: Yukihiko Ohashi
- Applicant: Yukihiko Ohashi
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2008-167369 20080626
- Main IPC: C09J5/00
- IPC: C09J5/00 ; B29C65/00
Abstract:
A semiconductor device producing method includes: vacuum-adsorbing a printed substrate on a vacuum adsorption surface of a stage with the printed substrate being pressed on the vacuum adsorption surface; temporarily fixing the printed substrate on the stage by commonly inserting a pin to a through hole formed in the printed substrate and a hole formed in the stage; and releasing the vacuum adsorption.
Public/Granted literature
- US20090321014A1 SEMICONDUCTOR DEVICE PRODUCING METHOD, SEMICONDUCTOR DEVICE PRODUCING APPARATUS AND PIN Public/Granted day:2009-12-31
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