Invention Grant
- Patent Title: Crystal puller and method for growing a monocrystalline ingot
- Patent Title (中): 晶体拉拔器和生长单晶锭的方法
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Application No.: US10705813Application Date: 2003-11-10
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Publication No.: US08147613B2Publication Date: 2012-04-03
- Inventor: Milind Kulkarni
- Applicant: Milind Kulkarni
- Applicant Address: US MO St. Peters
- Assignee: MEMC Electronic Materials, Inc.
- Current Assignee: MEMC Electronic Materials, Inc.
- Current Assignee Address: US MO St. Peters
- Agency: Armstrong Teasdale LLP
- Main IPC: C30B15/14
- IPC: C30B15/14
Abstract:
A crystal puller for growing monocrystalline ingots includes a side heater adjacent a crucible for heating the crucible and a melt heat exchanger sized and shaped for surrounding the ingot and disposed adjacent a surface of the melt. The heat exchanger includes a heat source having an area for radiating heat to the melt for controlling heat transfer at the upper surface of the melt. The melt heat exchanger is adapted to reduce heat loss at the exposed upper surface portion. Methods for growing single crystal silicon crystals having desired defect characteristics are disclosed.
Public/Granted literature
- US20040112277A1 Crystal puller and method for growing a monocrystalline ingot Public/Granted day:2004-06-17
Information query
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