A method of manufacturing a single crystal based on a Czochralski method of applying a horizontal magnetic field, wherein the single crystal is pulled in such a manner that a radial magnetic field intensity gradient ΔBr/ΔRc in a direction connecting central points of magnetic field generation coils exceeds 5.5 (Gauss/mm) and becomes 10 (Gauss/mm) or below where an origin O is a central part of the single crystal on a solid-liquid interface, ΔBr (Gauss) is a variation in a magnetic field intensity from the origin O to a crucible inner wall on a surface of a melt, and ΔRc (mm) is a radial distance from the origin O to the crucible inner wall on the surface of the melt.