Invention Grant
US08136070B2 Shallow trench isolation dummy pattern and layout method using the same
有权
浅沟隔离虚拟图案和布局方法使用相同
- Patent Title: Shallow trench isolation dummy pattern and layout method using the same
- Patent Title (中): 浅沟隔离虚拟图案和布局方法使用相同
-
Application No.: US12818033Application Date: 2010-06-17
-
Publication No.: US08136070B2Publication Date: 2012-03-13
- Inventor: Kelvin Yih-Yuh Doong , Chin-Chiu Hsia
- Applicant: Kelvin Yih-Yuh Doong , Chin-Chiu Hsia
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Thomas|Kayden
- Priority: TW92132806A 20031121
- Main IPC: G06F17/50
- IPC: G06F17/50
Abstract:
A dummy cell pattern for shallow trench isolation (STI). Active and shallow trench isolation areas are bounded by a circumference. An active area pattern completely overlaps the active area and a first polysilicon pattern in the shallow trench isolation area is outside the active area pattern. Layout methods using the same are also disclosed.
Public/Granted literature
- US20100252907A1 Shallow Trench Isolation Dummy Pattern and Layout Method Using the Same Public/Granted day:2010-10-07
Information query
