Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US12470928Application Date: 2009-05-22
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Publication No.: US08134884B2Publication Date: 2012-03-13
- Inventor: Hitoshi Iwai
- Applicant: Hitoshi Iwai
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-139001 20080528
- Main IPC: G11C8/00
- IPC: G11C8/00 ; G06F12/06 ; G06F13/00 ; G06F9/34

Abstract:
A semiconductor memory device comprises a memory unit having a first and a second port and including plural banks; a bank address conversion circuit operative to convert a first bank address fed from external into a second bank address different from the first bank address and operative to supply the first bank address to one of the first and second ports and supply the second bank address to the other of the first and second ports; and a write data conversion circuit operative to convert input data fed from external into write data different from the input data and operative to supply the input data to one of the first and second ports and supply the converted write data to the other of the first and second ports.
Public/Granted literature
- US20090300261A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2009-12-03
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