Invention Grant
- Patent Title: Thermally stable reference voltage generator for MRAM
- Patent Title (中): 用于MRAM的热稳定参考电压发生器
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Application No.: US12765897Application Date: 2010-04-23
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Publication No.: US08134881B2Publication Date: 2012-03-13
- Inventor: Hans Marc Bert Boeve
- Applicant: Hans Marc Bert Boeve
- Agency: Cooley LLP
- Priority: EP04101352 20040401
- Main IPC: G11C7/02
- IPC: G11C7/02 ; G11C7/04

Abstract:
A non volatile memory device comprises memory cells such as MRAM cells, reading circuits and a reference cell for generating a reference for use by the reading circuits, and can determine if the reference is degraded by thermal instability. This can help reduce a data error rate. Detecting such degradation can prove to be more effective than trying to design in enough margins for the lifetime of the device. The reference cell can be less susceptible to degradation than other cells by using different shape of cells and different write currents. Where each reference cell is used by many memory cells, the reference cell tends to be used more often than any particular memory cell and so can be more susceptible to degradation. Another way of ensuring against longer term degradation of the reference is periodically rewriting the reference cell.
Public/Granted literature
- US20100202231A1 THERMALLY STABLE REFERENCE VOLTAGE GENERATOR FOR MRAM Public/Granted day:2010-08-12
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