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US08134860B2 Shunted phase change memory 有权
分流相变存储器

Shunted phase change memory
Abstract:
By using a resistive film as a shunt, the snapback exhibited when transitioning from the reset state or amorphous phase of a phase change material, may be reduced or avoided. The resistive film may be sufficiently resistive that it heats the phase change material and causes the appropriate phase transitions without requiring a dielectric breakdown of the phase change material.
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