Invention Grant
- Patent Title: Shunted phase change memory
- Patent Title (中): 分流相变存储器
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Application No.: US12969756Application Date: 2010-12-16
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Publication No.: US08134860B2Publication Date: 2012-03-13
- Inventor: Guy Wicker
- Applicant: Guy Wicker
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Trop, Pruner & Hu, P.C.
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/36 ; H01L47/00 ; H01L21/00

Abstract:
By using a resistive film as a shunt, the snapback exhibited when transitioning from the reset state or amorphous phase of a phase change material, may be reduced or avoided. The resistive film may be sufficiently resistive that it heats the phase change material and causes the appropriate phase transitions without requiring a dielectric breakdown of the phase change material.
Public/Granted literature
- US20110085376A1 Shunted Phase Change Memory Public/Granted day:2011-04-14
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