Invention Grant
- Patent Title: LED and fabrication method thereof
- Patent Title (中): LED及其制造方法
-
Application No.: US10565832Application Date: 2004-08-24
-
Publication No.: US08134172B2Publication Date: 2012-03-13
- Inventor: Sang Kee Kim , Song Jae Lee , Hea Jung Jung
- Applicant: Sang Kee Kim , Song Jae Lee , Hea Jung Jung
- Applicant Address: KR Seoul
- Assignee: LG Innotek Co., Ltd.
- Current Assignee: LG Innotek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2003-0060897 20030901; KR10-2003-0065634 20030922
- International Application: PCT/KR2004/002126 WO 20040824
- International Announcement: WO2005/022656 WO 20050310
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
A light emitting diode is provided. The diode includes: a substrate; a first nitride gallium layer disposed above the substrate; a first electrode provided at one portion of and above the first nitride gallium layer; an active layer provided above the first nitride gallium layer, for emitting light; a second nitride gallium layer provided above the active layer; and transparent electrodes spaced apart from one another above the second nitride gallium layer.
Public/Granted literature
- US20070023771A1 Led and fabrication method thereof Public/Granted day:2007-02-01
Information query
IPC分类:
