Invention Grant
- Patent Title: Programmable metallization cell structure including an integrated diode, device including the structure, and method of forming same
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Application No.: US12895509Application Date: 2010-09-30
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Publication No.: US08134140B2Publication Date: 2012-03-13
- Inventor: Michael N. Kozicki
- Applicant: Michael N. Kozicki
- Applicant Address: US AZ Scottsdale
- Assignee: Axon Technologies Corporation
- Current Assignee: Axon Technologies Corporation
- Current Assignee Address: US AZ Scottsdale
- Agency: Snell & Wilmer L.L.P.
- Main IPC: H01L29/00
- IPC: H01L29/00
Abstract:
A microelectronic programmable structure suitable for storing information and array including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying energy to the structure, and thus information may be stored using the structure.
Public/Granted literature
Information query
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