Invention Grant
US08133821B2 Method of manufacturing porous insulating film, method of manufacturing semiconductor device, and semiconductor device
有权
多孔质绝缘膜的制造方法,半导体装置的制造方法以及半导体装置
- Patent Title: Method of manufacturing porous insulating film, method of manufacturing semiconductor device, and semiconductor device
- Patent Title (中): 多孔质绝缘膜的制造方法,半导体装置的制造方法以及半导体装置
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Application No.: US12620913Application Date: 2009-11-18
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Publication No.: US08133821B2Publication Date: 2012-03-13
- Inventor: Fuminori Ito , Yoshihiro Hayashi
- Applicant: Fuminori Ito , Yoshihiro Hayashi
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2008-294090 20081118
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A method includes forming an insulating film over a substrate by introducing a cyclic siloxane compound having a cyclic siloxane as a skeleton and having at least one volatile hydrocarbon group bonded to a side chain, and a silicon-containing compound into a plasma, and converting the insulating film to a porous insulating film by adding energy to the insulating film. The silicon-containing compound is decomposed using less energy as compared with the skeleton of the cyclic siloxane compound, the volatile hydrocarbon group, and the bond between the cyclic siloxane compound and the volatile hydrocarbon group.
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