Semiconductor device with a barrier film

Invention Grant

US08133813B2 Semiconductor device with a barrier film 有权

Title translation: 具有阻挡膜的半导体器件

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Patent Title: Semiconductor device with a barrier film
Patent Title (中): 具有阻挡膜的半导体器件
Application No.: US13087026

Application Date: 2011-04-14
Publication No.: US08133813B2

Publication Date: 2012-03-13
Inventor: Junichi Koike , Makoto Wada , Shingo Takahashi , Noriyoshi Shimizu , Hideki Shibata , Satoshi Nishikawa , Takamasa Usui , Hayato Nasu , Masaki Yoshimaru
Applicant: Junichi Koike , Makoto Wada , Shingo Takahashi , Noriyoshi Shimizu , Hideki Shibata , Satoshi Nishikawa , Takamasa Usui , Hayato Nasu , Masaki Yoshimaru
Applicant Address: JP Yokohama-shi
Assignee: Semiconductor Technology Academic Research Center
Current Assignee: Semiconductor Technology Academic Research Center
Current Assignee Address: JP Yokohama-shi
Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
Priority: JP2004-053458 20040227; JP2005-027756 20050203
Main IPC: H01L21/4763
IPC: H01L21/4763

Semiconductor device with a barrier film

Abstract:

A method of manufacturing a semiconductor device, including forming an opening in an interlevel insulating film disposed on a semiconductor substrate, forming an auxiliary film containing a predetermined metal element, to cover an inner surface of the opening, forming a main film to fill the opening after forming the auxiliary film, the main film containing, as a main component, Cu used as a material of an interconnection main layer, and performing a heat treatment before or after forming the main film, thereby diffusing the predetermined metal element of the auxiliary film onto a surface of the interlevel insulating film facing the auxiliary film, so as to form a barrier film on the interlevel insulating film within the opening, the barrier film containing, as a main component, a compound of the predetermined metal element with a component element of the interlevel insulating film.

Abstract(Chinese):

一种制造半导体器件的方法，包括在设置在半导体衬底上的层间绝缘膜中形成开口，形成含有预定金属元素的辅助膜，以覆盖开口的内表面，形成主膜以填充开口在形成辅助膜之后，主膜含有用作互连主层的材料的Cu，并且在形成主膜之前或之后进行热处理，从而扩散辅助膜的预定金属元素在面向辅助膜的层间绝缘膜的表面上，以在开口内的层间绝缘膜上形成阻挡膜，所述阻挡膜以预定的金属元素与成分元素为主要成分，的层间绝缘膜。

Public/Granted literature

US20110189849A1 SEMICONDUCTOR DEVICE WITH A BARRIER FILM Public/Granted day:2011-08-04

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）