Invention Grant
US08133801B1 Method for forming a semiconducting layer with improved gap filling properties
有权
用于形成具有改善的间隙填充性能的半导体层的方法
- Patent Title: Method for forming a semiconducting layer with improved gap filling properties
- Patent Title (中): 用于形成具有改善的间隙填充性能的半导体层的方法
-
Application No.: US11189875Application Date: 2005-07-27
-
Publication No.: US08133801B1Publication Date: 2012-03-13
- Inventor: Rinji Sugino , Yider Wu , Minh Van Ngo , Jeffrey Sinclair Glick , Kuo-Tung Chang
- Applicant: Rinji Sugino , Yider Wu , Minh Van Ngo , Jeffrey Sinclair Glick , Kuo-Tung Chang
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Agency: Harrity & Harrity, LLP
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A method of manufacturing a memory device includes forming a first dielectric layer over a substrate, forming a charge storage element over the first dielectric layer and forming an inter-gate dielectric over the charge storage element. The method also includes depositing a silicon control gate layer over the inter-gate dielectric using a reactant that contains chlorine.
Information query
IPC分类:
