Invention Grant
- Patent Title: Modifying or overwriting data stored in flash memory
- Patent Title (中): 修改或重写存储在闪存中的数据
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Application No.: US12396250Application Date: 2009-03-02
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Publication No.: US08131915B1Publication Date: 2012-03-06
- Inventor: Xueshi Yang
- Applicant: Xueshi Yang
- Applicant Address: BM Hamilton
- Assignee: Marvell Intentional Ltd.
- Current Assignee: Marvell Intentional Ltd.
- Current Assignee Address: BM Hamilton
- Main IPC: G06F13/00
- IPC: G06F13/00

Abstract:
Flash memory stored data modification is described. In embodiments, a flash memory system includes flash memory and a memory controller that manages data write and erase operations to the flash memory. The flash memory includes a first flash memory region of single-write flash memory cells that are each configured for a data write operation and a corresponding erase operation before a subsequent data write operation. The flash memory also includes a second flash memory region of multiple-write flash memory cells that are each configured for multiple data write operations before an erase operation.
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