Invention Grant
- Patent Title: Electronic device having a memory element and method of operation therefor
- Patent Title (中): 具有存储元件的电子设备及其操作方法
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Application No.: US12278438Application Date: 2006-02-09
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Publication No.: US08131914B2Publication Date: 2012-03-06
- Inventor: Joachim Kruecken
- Applicant: Joachim Kruecken
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- International Application: PCT/EP2006/001305 WO 20060209
- International Announcement: WO2007/090432 WO 20070816
- Main IPC: G06F12/00
- IPC: G06F12/00

Abstract:
An electronic device comprises a processing unit operably coupled to a buffer random access memory, in turn operably coupled to a non-volatile memory configured to emulate an electrically erasable programmable read only memory. The processing unit is arranged to transfer data between the buffer RAM and the non-volatile memory at a first clock frequency. A second RAM is operably coupled between the processing unit and the non-volatile memory and the processing unit sets a Tag bit in the second RAM to identify an address in the buffer RAM that is being written to or read from by the processing unit.
Public/Granted literature
- US20090106487A1 Electronic Device Having a Memory Element and Method of Operation Therefor Public/Granted day:2009-04-23
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