Invention Grant
US08131914B2 Electronic device having a memory element and method of operation therefor 有权
具有存储元件的电子设备及其操作方法

  • Patent Title: Electronic device having a memory element and method of operation therefor
  • Patent Title (中): 具有存储元件的电子设备及其操作方法
  • Application No.: US12278438
    Application Date: 2006-02-09
  • Publication No.: US08131914B2
    Publication Date: 2012-03-06
  • Inventor: Joachim Kruecken
  • Applicant: Joachim Kruecken
  • Applicant Address: US TX Austin
  • Assignee: Freescale Semiconductor, Inc.
  • Current Assignee: Freescale Semiconductor, Inc.
  • Current Assignee Address: US TX Austin
  • International Application: PCT/EP2006/001305 WO 20060209
  • International Announcement: WO2007/090432 WO 20070816
  • Main IPC: G06F12/00
  • IPC: G06F12/00
Electronic device having a memory element and method of operation therefor
Abstract:
An electronic device comprises a processing unit operably coupled to a buffer random access memory, in turn operably coupled to a non-volatile memory configured to emulate an electrically erasable programmable read only memory. The processing unit is arranged to transfer data between the buffer RAM and the non-volatile memory at a first clock frequency. A second RAM is operably coupled between the processing unit and the non-volatile memory and the processing unit sets a Tag bit in the second RAM to identify an address in the buffer RAM that is being written to or read from by the processing unit.
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