Invention Grant
- Patent Title: Semiconductor memory device and method of controlling the same
- Patent Title (中): 半导体存储器件及其控制方法
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Application No.: US12847955Application Date: 2010-07-30
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Publication No.: US08130586B2Publication Date: 2012-03-06
- Inventor: Shinya Fujioka , Tomohiro Kawakubo , Koichi Nishimura , Kotoku Sato
- Applicant: Shinya Fujioka , Tomohiro Kawakubo , Koichi Nishimura , Kotoku Sato
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Arent Fox, LLP
- Priority: JP11-318458 19991109; JP2000-241019 20000809; JP2000-329493 20001027
- Main IPC: G11C5/14
- IPC: G11C5/14

Abstract:
An internal voltage generator when activated, generates an internal voltage to be supplied to an internal circuit. Operating the internal voltage generator consumes a predetermined amount of the power. In response to a control signal from the exterior, an entry circuit inactivates the internal voltage generator. When the internal voltage generator is inactivated, the internal voltage is not generated, thereby reducing the power consumption. By the control signal from the exterior, therefore, a chip can easily enter a low power consumption mode. The internal voltage generator is exemplified by a booster for generating the boost voltage of a word line connected with memory cells, a substrate voltage generator for generating a substrate voltage, or a precharging voltage generator for generating the precharging voltage of bit lines to be connected with the memory cells.
Public/Granted literature
- US20100302879A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME Public/Granted day:2010-12-02
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