Invention Grant
- Patent Title: Material detector
- Patent Title (中): 材料检测器
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Application No.: US12308769Application Date: 2007-07-11
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Publication No.: US08129978B2Publication Date: 2012-03-06
- Inventor: Kazuo Nakazato
- Applicant: Kazuo Nakazato
- Applicant Address: JP Nagoya-Shi, Aichi
- Assignee: National University Corporation Nagoya University
- Current Assignee: National University Corporation Nagoya University
- Current Assignee Address: JP Nagoya-Shi, Aichi
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2006-193425 20060713
- International Application: PCT/JP2007/063847 WO 20070711
- International Announcement: WO2008/007716 WO 20080117
- Main IPC: G01N27/00
- IPC: G01N27/00 ; G01N27/60 ; G01N27/62

Abstract:
To realize a small size and high detection accuracy in a substance detection apparatus. A charge detection field effect transistor and a control circuit therefor are provided in each cell, and the control circuit controls the charge detection field effect transistor so that the drain-source voltage and the drain current of the charge detection field effect transistor are always maintained constant. The control circuit may be formed in a CMOS configuration including a small number of elements in a small area using a standard CMOS integrated circuit technique.
Public/Granted literature
- US20100007326A1 Material Detector Public/Granted day:2010-01-14
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