Invention Grant
US08129844B2 Method of forming a metal silicide layer, devices incorporating metal silicide layers and design structures for the devices
有权
形成金属硅化物层的方法，包含金属硅化物层的器件和用于器件的设计结构
- Patent Title: Method of forming a metal silicide layer, devices incorporating metal silicide layers and design structures for the devices
- Patent Title (中): 形成金属硅化物层的方法，包含金属硅化物层的器件和用于器件的设计结构
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Application No.: US12142896Application Date: 2008-06-20
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Publication No.: US08129844B2Publication Date: 2012-03-06
- Inventor: Felix Patrick Anderson , Zhong-Xiang He , Thomas Leddy McDevitt , Eric Jeffrey White
- Applicant: Felix Patrick Anderson , Zhong-Xiang He , Thomas Leddy McDevitt , Eric Jeffrey White
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Schmeiser, Olsen & Watts
- Agent Anthony Canale
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/48 ; H01L29/40
Abstract:
Electronic devices and design structures of electronic devices containing metal silicide layers. The devices include: a thin silicide layer between two dielectric layers, at least one metal wire abutting a less than whole region of the silicide layer and in electrical contact with the silicide layer.
Public/Granted literature
Information query
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