Invention Grant
- Patent Title: High-voltage transistor device with integrated resistor
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Application No.: US12583426Application Date: 2009-08-20
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Publication No.: US08129815B2Publication Date: 2012-03-06
- Inventor: Sujit Banerjee , Vijay Parthasarathy
- Applicant: Sujit Banerjee , Vijay Parthasarathy
- Applicant Address: US CA San Jose
- Assignee: Power Integrations, Inc
- Current Assignee: Power Integrations, Inc
- Current Assignee Address: US CA San Jose
- Agency: The Law Offices of Bradley J. Bereznak
- Main IPC: H01L29/80
- IPC: H01L29/80 ; H01L27/105

Abstract:
A high-voltage device structure comprises a resistor coupled to a tap transistor that includes a JFET in a configuration wherein a voltage provided at a terminal of the JFET is substantially proportional to an external voltage when the external voltage is less than a pinch-off voltage of the JFET. The voltage provided at the terminal being substantially constant when the external voltage is greater than the pinch-off voltage. One end of the resistor is substantially at the external voltage when the external voltage is greater than the pinch-off voltage. When the external voltage is negative, the resistor limits current injected into the substrate. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure.
Public/Granted literature
- US20110042726A1 High-voltage transistor device with integrated resistor Public/Granted day:2011-02-24
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