Invention Grant
- Patent Title: Magnetic memory device
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Application No.: US12686145Application Date: 2010-01-12
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Publication No.: US08129806B2Publication Date: 2012-03-06
- Inventor: Kyungtae Nam , Sukhun Choi , Jangeun Lee , Sechung Oh , Junho Jeong
- Applicant: Kyungtae Nam , Sukhun Choi , Jangeun Lee , Sechung Oh , Junho Jeong
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2009-0005190 20090121
- Main IPC: H01L29/82
- IPC: H01L29/82
Abstract:
A magnetic memory device includes a magnetic tunnel junction (MTJ) structure and an electrode embedded in a dielectric structure. The MTJ structure includes a free layer. The electrode is formed of silicon-germanium and is electrically connected to the MTJ. The electrode heats the free layer to reduce the coercive force of the free layer to reduce a critical current density.
Public/Granted literature
- US20100181633A1 Magnetic Memory Device Public/Granted day:2010-07-22
Information query
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