Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13183103Application Date: 2011-07-14
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Publication No.: US08129776B2Publication Date: 2012-03-06
- Inventor: Makoto Sakuma , Takuya Futatsuyama
- Applicant: Makoto Sakuma , Takuya Futatsuyama
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-241775 20060906; JP2007-228882 20070904
- Main IPC: H01L29/788
- IPC: H01L29/788

Abstract:
A semiconductor device includes a memory cell array area, a peripheral circuit area on a periphery of the memory cell array area, and a boundary area having a specific width between the memory cell array area and the peripheral circuit area, the memory cell array area including a cell area including nonvolatile semiconductor memory cells, linear wirings extending from inside of the cell area to an area outside the cell area, and lower layer wirings in a lower layer than the linear wirings in the boundary area and electrically connected to the linear wirings, and wiring widths of the lower layer wirings being larger than widths of the linear wirings, the peripheral circuit area including a patterns electrically connected to the linear wirings via the lower layer wirings, the boundary area failing to be provided with the linear wirings and a wiring in same layer as the linear wirings.
Public/Granted literature
- US20110267867A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-11-03
Information query
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