Invention Grant
- Patent Title: Charged-particle beam writing method and charged-particle beam writing apparatus
- Patent Title (中): 带电粒子束写入方法和带电粒子束写入装置
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Application No.: US12409974Application Date: 2009-03-24
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Publication No.: US08129698B2Publication Date: 2012-03-06
- Inventor: Noriaki Nakayamada , Seiji Wake
- Applicant: Noriaki Nakayamada , Seiji Wake
- Applicant Address: JP Numazu-shi
- Assignee: NuFlare Technology, Inc.
- Current Assignee: NuFlare Technology, Inc.
- Current Assignee Address: JP Numazu-shi
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-077008 20080325; JP2008-331585 20081225
- Main IPC: G21K5/10
- IPC: G21K5/10

Abstract:
A pattern density distribution and a dose distribution calculated using the pattern density distribution are multiplied by each other to calculate an exposure distribution. A fogging electron amount distribution is calculated using the exposure distribution and a function descriptive of a fogging spread distribution. Charge amount distributions in irradiation and non-irradiation regions are calculated using the exposure distribution and the fogging electron amount distribution. A position displacement amount distribution is calculated using the charge amount distributions and a response function for converting a charge amount to a position displacement error.
Public/Granted literature
- US20090242787A1 CHARGED-PARTICLE BEAM WRITING METHOD AND CHARGED-PARTICLE BEAM WRITING APPARATUS Public/Granted day:2009-10-01
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