Invention Grant
- Patent Title: Method of forming a shielded semiconductor device and structure therefor
- Patent Title (中): 形成屏蔽半导体器件的方法及其结构
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Application No.: US12170202Application Date: 2008-07-09
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Publication No.: US08129266B2Publication Date: 2012-03-06
- Inventor: Hormazdyar M. Dalal , Jagdish Prasad
- Applicant: Hormazdyar M. Dalal , Jagdish Prasad
- Applicant Address: US AZ Phoenix
- Assignee: Semiconductor Componenets Industries, LLC
- Current Assignee: Semiconductor Componenets Industries, LLC
- Current Assignee Address: US AZ Phoenix
- Agent Robert F. Hightower
- Main IPC: H01L23/552
- IPC: H01L23/552 ; H01L21/768
Abstract:
In one embodiment, a semiconductor device is formed to include a plurality of conductor layers that interconnect electrical signals between semiconductor elements of the semiconductor device. A metal shield layer is formed overlying a portion of the plurality of conductor layers. A signal re-distribution layer is formed overlying the metal shield layer.
Public/Granted literature
- US20100006989A1 METHOD OF FORMING A SHIELDED SEMICONDUCTOR DEVICE AND STRUCTURE THEREFOR Public/Granted day:2010-01-14
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