Method of fabricating two-step self-aligned contact

Invention Grant

US08129235B2 Method of fabricating two-step self-aligned contact 有权

Title translation: 制造两步自对准接触的方法

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Patent Title: Method of fabricating two-step self-aligned contact
Patent Title (中): 制造两步自对准接触的方法
Application No.: US11686740

Application Date: 2007-03-15
Publication No.: US08129235B2

Publication Date: 2012-03-06
Inventor: Ling-Chun Chou , Ming-Tsung Chen , Po-Chao Tsao
Applicant: Ling-Chun Chou , Ming-Tsung Chen , Po-Chao Tsao
Applicant Address: TW Hsinchu
Assignee: United Microelectronics Corp.
Current Assignee: United Microelectronics Corp.
Current Assignee Address: TW Hsinchu
Agency: J.C. Patents
Main IPC: H01L21/8238
IPC: H01L21/8238

Method of fabricating two-step self-aligned contact

Abstract:

A method of fabricating a self-aligned contact is provided. A first dielectric layer is formed on a substrate having a contact region therein. Next, a lower hole corresponding to the contact region is formed in the first dielectric layer. Thereafter, a second dielectric layer is formed on the first dielectric layer, and then an upper hole self-aligned to and communicated with the lower hole is formed in the second dielectric layer, wherein the upper hole and the lower hole constitute a self-aligned contact hole. Afterwards, the self-aligned contact hole is filled with a conductive layer.

Abstract(Chinese):

提供一种制造自对准接触的方法。在其中具有接触区域的基板上形成第一电介质层。接下来，在第一电介质层中形成与接触区域对应的下孔。此后，在第一电介质层上形成第二电介质层，然后在第二电介质层中形成自对准并与下孔连通的上孔，其中上孔和下孔构成自对准接触孔。然后，自对准接触孔填充有导电层。

Public/Granted literature

US20080230917A1 METHOD OF FABRICATING TWO-STEP SELF-ALIGNED CONTACT Public/Granted day:2008-09-25

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS