Method for increasing the removal rate of photoresist layer

Invention Grant

US08129101B2 Method for increasing the removal rate of photoresist layer 有权

Title translation: 提高光致抗蚀剂层去除率的方法

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Patent Title: Method for increasing the removal rate of photoresist layer
Patent Title (中): 提高光致抗蚀剂层去除率的方法
Application No.: US12399019

Application Date: 2009-03-06
Publication No.: US08129101B2

Publication Date: 2012-03-06
Inventor: Wen-Hsien Huang , Min-Chieh Yang , Jiunn-Hsing Liao
Applicant: Wen-Hsien Huang , Min-Chieh Yang , Jiunn-Hsing Liao
Agent Chun-Ming Shih
Main IPC: G03F7/26
IPC: G03F7/26

Method for increasing the removal rate of photoresist layer

Abstract:

A method for increasing the removal rate of a photoresist layer is provided. The method includes performing a pre-treatment of a substrate, such as a plasma process, before forming the photoresist layer. The method can be applied to the fabrication of semiconductor devices for increasing the removal rate of the photoresist layer.

Abstract(Chinese):

提供了增加光致抗蚀剂层的去除速率的方法。该方法包括在形成光致抗蚀剂层之前对诸如等离子体工艺的衬底进行预处理。该方法可以应用于半导体器件的制造，以增加光致抗蚀剂层的去除速率。

Public/Granted literature

US20090169767A1 METHOD FOR INCREASING THE REMOVAL RATE OF PHOTORESIST LAYER Public/Granted day:2009-07-02

Information query

Espacenet

IPC分类:

G	物理
G03	摄影术；电影术；利用了光波以外其他波的类似技术；电记录术；全息摄影术
G03F	图纹面的照相制版工艺，例如，印刷工艺、半导体器件的加工工艺；其所用材料；其所用原版；其所用专用设备（照相排版装置入B41B；为摄影用的感光材料或处理入G03C；电记录、感光层或处理入G03G）
G03F7/00	图纹面，例如，印刷表面的照相制版如光刻工艺；图纹面照相制版用的材料，如：含光致抗蚀剂的材料；图纹面照相制版的专用设备（用于特殊工艺的光致抗蚀剂结构见相关的位置，例如，B44C，H01L，例如，H01L21/00，H05K）
G03F7/26	.感光材料的处理及其设备（G03F7/12至G03F7/24优先）