Invention Grant
- Patent Title: ZnO vapor deposition material, process for producing the same, and ZnO film
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Application No.: US12733897Application Date: 2008-09-29
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Publication No.: US08128847B2Publication Date: 2012-03-06
- Inventor: Yoshitaka Mayuzumi
- Applicant: Yoshitaka Mayuzumi
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Materials Corporation
- Current Assignee: Mitsubishi Materials Corporation
- Current Assignee Address: JP Tokyo
- Agency: Edwards Wildman Palmer LLP
- Priority: JP2007-252759 20070927; JP2007-252760 20070927; JP2007-252761 20070927; JP2007-252762 20070927; JP2007-252763 20070927; JP2007-252764 20070927; JP2007-252765 20070927; JP2007-252766 20070927; JP2008-245299 20080925; JP2008-245300 20080925; JP2008-245301 20080925; JP2008-245302 20080925; JP2008-245303 20080925; JP2008-245304 20080925; JP2008-245305 20080925; JP2008-245306 20080925
- International Application: PCT/JP2008/067685 WO 20080929
- International Announcement: WO2009/041694 WO 20090402
- Main IPC: H01B1/02
- IPC: H01B1/02
Abstract:
A ZnO vapor deposition material for formation of a transparent conductive film or the like consists mainly of a porous ZnO sintered body containing one or more first additive elements selected from Ce, La, Y, Pr, Nd, Pm, and Sm, and second additive elements selected from Al, Ga, Sc, and B. The content of the first additive elements is higher than the content of the second additive elements. The content of the first additive elements is in a range of 0.1 to 14.9% by mass, and the content of the second additive elements is in a range of 0.1 to 10% by mass. The sintered body has a porosity of 3 to 50%.
Public/Granted literature
- US08231812B2 ZnO vapor deposition material, process for producing the same, and ZnO film Public/Granted day:2012-07-31
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