Invention Grant
- Patent Title: Multibeam laser diode
- Patent Title (中): 多波束激光二极管
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Application No.: US12458565Application Date: 2009-07-16
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Publication No.: US08121168B2Publication Date: 2012-02-21
- Inventor: Shinya Sato
- Applicant: Shinya Sato
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Rader, Fishman & Grauer PLLC
- Priority: JP2008-214701 20080822
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
A multibeam laser diode capable of improving heat release characteristics in the case of junction-down assembly is provided. Contact electrodes are provided respectively for protruding streaks of a laser diode device, and pad electrodes are provided to avoid the protruding streaks and the contact electrodes. The contact electrodes and the pad electrodes are connected by wiring electrodes, and the contact electrodes are covered with a first insulating film. Thereby, electric connection is enabled without straightly jointing the contact electrodes to a solder layer. A heat conduction layer configured of a metal is provided on the first insulating film, the heat conduction layer is jointed to the solder layer, and thereby the heat release characteristics are able to be improved even in the case of junction-down assembly.
Public/Granted literature
- US20100046563A1 Multibeam laser diode Public/Granted day:2010-02-25
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