Invention Grant
- Patent Title: MQW laser structure comprising plural MQW regions
- Patent Title (中): MQW激光器结构包括多个MQW区域
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Application No.: US13161962Application Date: 2011-06-16
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Publication No.: US08121165B2Publication Date: 2012-02-21
- Inventor: Rajaram Bhat , Jerome Napierala , Dmitry Sizov , Chung-En Zah
- Applicant: Rajaram Bhat , Jerome Napierala , Dmitry Sizov , Chung-En Zah
- Applicant Address: US NY Corning
- Assignee: Corning Incorporated
- Current Assignee: Corning Incorporated
- Current Assignee Address: US NY Corning
- Agent Bruce P. Watson
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
Multi-quantum well laser structures are provided comprising active and/or passive MQW regions. Each of the MQW regions comprises a plurality of quantum wells and intervening barrier layers. Adjacent MQW regions are separated by a spacer layer that is thicker than the intervening barrier layers. The bandgap of the quantum wells is lower than the bandgap of the intervening barrier layers and the spacer layer. The active region may comprise active and passive MQWs and be configured for electrically-pumped stimulated emission of photons or it may comprises active MQW regions configured for optically-pumped stimulated emission of photons.
Public/Granted literature
- US20110243173A1 MQW LASER STRUCTURE COMPRISING PLURAL MQW REGIONS Public/Granted day:2011-10-06
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