Invention Grant
- Patent Title: Programmable resistance memory
- Patent Title (中): 可编程电阻记忆
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Application No.: US12291111Application Date: 2008-11-06
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Publication No.: US08120940B2Publication Date: 2012-02-21
- Inventor: Guy Wicker
- Applicant: Guy Wicker
- Applicant Address: US MI Troy
- Assignee: Ovonyx, Inc.
- Current Assignee: Ovonyx, Inc.
- Current Assignee Address: US MI Troy
- Agent Kevin L. Bray
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A minimal-duration current pulse is employed to program a programmable resistance memory to a high-resistance, RESET state. Although the duration and magnitude of RESET programming pulses in accordance with the principles of the present invention may vary depending, for example, upon the composition and structure of a cell, a method and apparatus in accordance with the principles of the present invention employs the briefest pulse practicable for a given cell or array of cells.
Public/Granted literature
- US20100110780A1 Programmable resistance memory Public/Granted day:2010-05-06
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