Invention Grant
US08120940B2 Programmable resistance memory 失效
可编程电阻记忆

  • Patent Title: Programmable resistance memory
  • Patent Title (中): 可编程电阻记忆
  • Application No.: US12291111
    Application Date: 2008-11-06
  • Publication No.: US08120940B2
    Publication Date: 2012-02-21
  • Inventor: Guy Wicker
  • Applicant: Guy Wicker
  • Applicant Address: US MI Troy
  • Assignee: Ovonyx, Inc.
  • Current Assignee: Ovonyx, Inc.
  • Current Assignee Address: US MI Troy
  • Agent Kevin L. Bray
  • Main IPC: G11C11/00
  • IPC: G11C11/00
Programmable resistance memory
Abstract:
A minimal-duration current pulse is employed to program a programmable resistance memory to a high-resistance, RESET state. Although the duration and magnitude of RESET programming pulses in accordance with the principles of the present invention may vary depending, for example, upon the composition and structure of a cell, a method and apparatus in accordance with the principles of the present invention employs the briefest pulse practicable for a given cell or array of cells.
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