Invention Grant
US08120889B2 Tailored emitter bias as a means to optimize the indirect-charging performance of a nano-structured emitting electrode
有权
定制的发射极偏压作为优化纳米结构发射电极的间接充电性能的手段
- Patent Title: Tailored emitter bias as a means to optimize the indirect-charging performance of a nano-structured emitting electrode
- Patent Title (中): 定制的发射极偏压作为优化纳米结构发射电极的间接充电性能的手段
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Application No.: US12132913Application Date: 2008-06-04
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Publication No.: US08120889B2Publication Date: 2012-02-21
- Inventor: Fa-Gung Fan , Joseph A. Swift , Michael F. Zona , David H. Pan
- Applicant: Fa-Gung Fan , Joseph A. Swift , Michael F. Zona , David H. Pan
- Applicant Address: US CT Norwalk
- Assignee: Xerox Corporation
- Current Assignee: Xerox Corporation
- Current Assignee Address: US CT Norwalk
- Agency: MH2 Technology Law Group LLP
- Main IPC: G03G15/02
- IPC: G03G15/02 ; H01H47/32 ; H05F3/00

Abstract:
Exemplary embodiments provide charging systems and methods for effectively delivering charges onto a receptor. The charging system can include a low velocity gas stream, an emitter assembly for providing cathode-to-anode field bias to generate charges from the low velocity gas stream, and an emitter-to-receptor (e.g., photoreceptor) electric bias to enhance the charge delivery to the receptor. The disclosed charging systems and methods can be used to achieve an optimal charging performance at a low projected cost for any suitable receptor that needs to be charged. Exemplary receptors can include a photoreceptor (PR) such as a belt PR or a drum PR, a toner layer, a sheet of media on which toner can be deposited, or a transfer belt in an electrophotographic printing machine.
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