Invention Grant
- Patent Title: Charge pump circuit
- Patent Title (中): 电荷泵电路
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Application No.: US12542533Application Date: 2009-08-17
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Publication No.: US08120413B2Publication Date: 2012-02-21
- Inventor: Ming Li , Qingyang Wu , Liwu Yang , Yangyuan Wang
- Applicant: Ming Li , Qingyang Wu , Liwu Yang , Yangyuan Wang
- Applicant Address: CN Beijing
- Assignee: Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee: Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee Address: CN Beijing
- Agency: Squire Sanders (US) LLP
- Priority: CN200810117972 20080818; CN200810172764 20081212
- Main IPC: G05F3/16
- IPC: G05F3/16 ; H02M3/155

Abstract:
A charge pump circuit includes a switch unit adapted to transmit charges from the input of the charge pump to the output of the charge pump; a transmission unit adapted to control turn-on or cut-off of an MOS transistor in the switch unit; and a charging unit in one-to-one correspondence with a PMOS transistor in the switch unit and adapted to store charges to boost the transmission voltage. A first NMOS transistor and at least two PMOS transistor are used as the switch unit during transmission of the charges, so that normal work can be enabled with high transmission efficiency in the case of a low source voltage.
Public/Granted literature
- US20100039167A1 Charge Pump Circuit Public/Granted day:2010-02-18
Information query
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