Invention Grant
- Patent Title: Semiconductor device having decreased contact resistance and method for manufacturing the same
- Patent Title (中): 具有降低的接触电阻的半导体器件及其制造方法
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Application No.: US12411488Application Date: 2009-03-26
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Publication No.: US08120185B2Publication Date: 2012-02-21
- Inventor: Hee Jung Yang
- Applicant: Hee Jung Yang
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2009-0011169 20090211
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
A semiconductor device includes a first plug formed on a semiconductor substrate and exposed on side and upper surfaces of an upper part thereof and a second plug formed on the first plug to contact the exposed side and upper surfaces of the upper part of the first plug.
Public/Granted literature
- US20100200997A1 SEMICONDUCTOR DEVICE HAVING DECREASED CONTACT RESISTANCE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2010-08-12
Information query
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