Invention Grant
- Patent Title: Post passivation interconnection process and structures
- Patent Title (中): 后钝化互连工艺和结构
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Application No.: US12182148Application Date: 2008-07-30
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Publication No.: US08120181B2Publication Date: 2012-02-21
- Inventor: Mou-Shiung Lin , Chiu-Ming Chou , Chien-Kang Chou
- Applicant: Mou-Shiung Lin , Chiu-Ming Chou , Chien-Kang Chou
- Applicant Address: TW Hsinchu
- Assignee: Megica Corporation
- Current Assignee: Megica Corporation
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L27/10
- IPC: H01L27/10
Abstract:
A system and method for forming post passivation metal structures is described. Metal interconnections and high quality electrical components, such as inductors, transformers, capacitors, or resistors are formed on a layer of passivation, or on a thick layer of polymer over a passivation layer.
Public/Granted literature
- US20080290520A1 Reliable metal bumps on top of I/O pads after removal of test probe marks Public/Granted day:2008-11-27
Information query
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