Invention Grant
- Patent Title: Air gap interconnect structures and methods for forming the same
- Patent Title (中): 气隙互连结构及其形成方法
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Application No.: US12615354Application Date: 2009-11-10
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Publication No.: US08120179B2Publication Date: 2012-02-21
- Inventor: Kaushik Chanda , Cathryn J. Christiansen , Daniel C. Edelstein , Satyanarayana V. Nitta , Son V. Nguyen , Shom Ponoth , Hosadurga Shobha
- Applicant: Kaushik Chanda , Cathryn J. Christiansen , Daniel C. Edelstein , Satyanarayana V. Nitta , Son V. Nguyen , Shom Ponoth , Hosadurga Shobha
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent H. Daniel Schnurmann
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
A metal interconnect structure includes at least a pair of metal lines, a cavity therebetween, and a dielectric metal-diffusion barrier layer located on at least one portion of walls of the cavity. After formation of a cavity between the pair of metal lines, the dielectric metal-diffusion barrier layer is formed on the exposed surfaces of the cavity. A dielectric material layer is formed above the pair of metal lines to encapsulate the cavity. The dielectric metal-diffusion barrier layer prevents diffusion of metal and impurities from one metal line to another metal line and vice versa, thereby preventing electrical shorts between the pair of metal lines.
Public/Granted literature
- US20110108992A1 AIR GAP INTERCONNECT STRUCTURES AND METHODS FOR FORMING THE SAME Public/Granted day:2011-05-12
Information query
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