Invention Grant
US08120103B2 Semiconductor device with vertical gate and method for fabricating the same
有权
具有垂直栅极的半导体器件及其制造方法
- Patent Title: Semiconductor device with vertical gate and method for fabricating the same
- Patent Title (中): 具有垂直栅极的半导体器件及其制造方法
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Application No.: US12493775Application Date: 2009-06-29
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Publication No.: US08120103B2Publication Date: 2012-02-21
- Inventor: Ki-Ro Hong
- Applicant: Ki-Ro Hong
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2008-0102113 20081017
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A semiconductor device includes a substrate; a plurality of active pillars formed over the substrate; bulb-type trenches, each of the bulb-type trenches formed inside the substrate between the active pillars; buried bit lines, each of the buried bit lines being formed on a sidewall of a respective one of the bulb-type trenches; and vertical gates, each of the vertical gates being formed to surround a sidewall of a respective one of the active pillars.
Public/Granted literature
- US20100096693A1 SEMICONDUCTOR DEVICE WITH VERTICAL GATE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2010-04-22
Information query
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