Invention Grant
- Patent Title: Polymer-based ferroelectric memory
- Patent Title (中): 基于聚合物的铁电存储器
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Application No.: US12847531Application Date: 2010-07-30
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Publication No.: US08120083B2Publication Date: 2012-02-21
- Inventor: Vishnu K. Agarwal , Howard E. Rhodes
- Applicant: Vishnu K. Agarwal , Howard E. Rhodes
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
Apparatus and systems may comprise electrode structures that include two or more dissimilar and abutting metal layers on a surface, some of the electrode structures separated by a gap; and a polymer-based ferroelectric layer overlying and directly abutting some of the electrode structures. Methods may comprise actions to form and operate the apparatus and systems. Additional apparatus, systems, and methods are disclosed.
Public/Granted literature
- US20100290265A1 POLYMER-BASED FERROELECTRIC MEMORY Public/Granted day:2010-11-18
Information query
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