Disclosed relates to a ferroelectric memory device that is manufactured easily, operates at low voltage and has excellent data preservation period, and a method of manufacturing the same. In the present invention, a ferroelectric layer 60 is formed on a part corresponding to a channel region 4 on the silicon substrate 1. The ferroelectric layer 60 made of an organic material such as PVDF, etc. shows polarization characteristics at low voltage below 1V, and such polarization characteristics continue over a specific time period, not changed as time goes by.Accordingly, it is possible to manufacture a ferroelectric memory device that operates at low voltage and is manufactured with a simplified structure in a simplified method.