Invention Grant
US08120027B2 Backside nanoscale texturing to improve IR response of silicon solar cells and photodetectors
有权
背面纳米级纹理化，以提高硅太阳能电池和光电探测器的IR响应
- Patent Title: Backside nanoscale texturing to improve IR response of silicon solar cells and photodetectors
- Patent Title (中): 背面纳米级纹理化，以提高硅太阳能电池和光电探测器的IR响应
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Application No.: US12927423Application Date: 2010-11-15
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Publication No.: US08120027B2Publication Date: 2012-02-21
- Inventor: Leonard Forbes
- Applicant: Leonard Forbes
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L31/0232 ; H01L21/02 ; H01L21/00
Abstract:
The absorption coefficient of silicon for infrared light is very low and most solar cells absorb very little of the infrared light energy in sunlight. Very thick cells of crystalline silicon can be used to increase the absorption of infrared light energy but the cost of thick crystalline cells is prohibitive. The present invention relates to the use of less expensive microcrystalline silicon solar cells and the use of backside texturing with diffusive scattering to give a very large increase in the absorption of infrared light. Backside texturing with diffusive scattering and with a smooth front surface of the solar cell results in multiple internal reflections, light trapping, and a large enhancement of the absorption of infrared solar energy.
Public/Granted literature
- US20110140106A1 Backside naoscale texturing to improve IR response of silicon solar cells and photodetectors Public/Granted day:2011-06-16
Information query
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