Invention Grant
US08094509B2 Apparatus and method for placement of boosting cell with adaptive booster scheme 有权
用自适应增强方案放置升压电池的装置和方法

Apparatus and method for placement of boosting cell with adaptive booster scheme
Abstract:
A memory includes memory arrays and boost converter circuitry. The boost converter circuitry provides at least one boosted voltage to each of the memory arrays when the memory array is being accessed. The boosted voltages may include a word line voltage, and/or a pass gate voltage provided to the gates of pass line transistor in a sector decoders and/or an array decoder for the memory cells being accessed. The boost converter circuitry includes at least two boost converters, and a switch. When one of the memory arrays is accessed, the switch either couples the boost converters together or does not couple the boost converters together based on the distance of the memory array being accessed from the boost converters.
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