Invention Grant
US08094509B2 Apparatus and method for placement of boosting cell with adaptive booster scheme
有权
用自适应增强方案放置升压电池的装置和方法
- Patent Title: Apparatus and method for placement of boosting cell with adaptive booster scheme
- Patent Title (中): 用自适应增强方案放置升压电池的装置和方法
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Application No.: US12262123Application Date: 2008-10-30
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Publication No.: US08094509B2Publication Date: 2012-01-10
- Inventor: Chin-Ghee Chng , Teoh Boon-Weng
- Applicant: Chin-Ghee Chng , Teoh Boon-Weng
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Agency: Frommer Lawrence & Haug LLP
- Agent Matthew M. Gaffney
- Main IPC: G11C7/12
- IPC: G11C7/12 ; G11C8/08

Abstract:
A memory includes memory arrays and boost converter circuitry. The boost converter circuitry provides at least one boosted voltage to each of the memory arrays when the memory array is being accessed. The boosted voltages may include a word line voltage, and/or a pass gate voltage provided to the gates of pass line transistor in a sector decoders and/or an array decoder for the memory cells being accessed. The boost converter circuitry includes at least two boost converters, and a switch. When one of the memory arrays is accessed, the switch either couples the boost converters together or does not couple the boost converters together based on the distance of the memory array being accessed from the boost converters.
Public/Granted literature
- US20100110819A1 Apparatus and Method for Placement of Boosting Cell With Adaptive Booster Scheme Public/Granted day:2010-05-06
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