Invention Grant
- Patent Title: Semiconductor circuit
- Patent Title (中): 半导体电路
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Application No.: US12559017Application Date: 2009-09-14
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Publication No.: US08093879B2Publication Date: 2012-01-10
- Inventor: Ryuji Yamamoto , Nobuyuki Ohtaka
- Applicant: Ryuji Yamamoto , Nobuyuki Ohtaka
- Applicant Address: JP Osaka JP Gunma
- Assignee: Sanyo Electric Co., Ltd.,Sanyo Semiconductor Co., Ltd.
- Current Assignee: Sanyo Electric Co., Ltd.,Sanyo Semiconductor Co., Ltd.
- Current Assignee Address: JP Osaka JP Gunma
- Agency: Osha • Liang LLP
- Priority: JP2008-236832 20080916
- Main IPC: G05F1/40
- IPC: G05F1/40

Abstract:
A semiconductor circuit (10a) comprises a first terminal section (17) to be connected to a connection point of two external resistors; a second terminal section (18) to be connected to an external circuit; a voltage circuit section having a first terminal connected to the second terminal section (18); a reference voltage circuit section (102) which outputs a predetermined voltage; an operational amplifier (104) having a first input terminal connected to the reference voltage circuit section (102), a second input terminal connected to the first terminal section (17), and an output terminal connected to a second terminal of the voltage circuit section; an abnormality detecting circuit which detects an abnormal voltage of the first terminal section (17); a normal signal generating unit (130) which generates a normal signal; and a switching circuit which, when the abnormality detecting circuit detects the abnormal voltage, does not output a voltage based on the first terminal section (17) to the second terminal section (18) and instead outputs a normal voltage based on the normal signal to the second terminal section (18).
Public/Granted literature
- US20100066330A1 SEMICONDUCTOR CIRCUIT Public/Granted day:2010-03-18
Information query
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