Invention Grant
- Patent Title: Device comprising an ohmic via contact, and method of fabricating thereof
- Patent Title (中): 包含欧姆通孔接点的装置及其制造方法
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Application No.: US12575629Application Date: 2009-10-08
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Publication No.: US08093688B2Publication Date: 2012-01-10
- Inventor: David A. Rothenbury , James D. Huffman
- Applicant: David A. Rothenbury , James D. Huffman
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L29/06
- IPC: H01L29/06

Abstract:
Device comprising an ohmic via contact, and method of fabricating thereof. A preferred embodiment comprises forming a metal layer over a substrate, forming a conductive barrier layer over the metal layer, depositing an insulating layer over the conductive barrier layer, creating an opening in the insulating layer to expose the conductive barrier layer, and forming a via contact in the opening. The conductive barrier layer protects the metal layer by preventing the formation of an oxide layer, which could reduce conductivity.
Public/Granted literature
- US20100025797A1 Device Comprising an Ohmic Via Contact, and Method of Fabricating Thereof Public/Granted day:2010-02-04
Information query
IPC分类: