Invention Grant
- Patent Title: Storage capacitor and method of manufacturing a storage capacitor
- Patent Title (中): 存储电容器和制造存储电容器的方法
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Application No.: US11856409Application Date: 2007-09-17
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Publication No.: US08093641B2Publication Date: 2012-01-10
- Inventor: Rolf Weis
- Applicant: Rolf Weis
- Applicant Address: DE Munich
- Assignee: Qimonda AG
- Current Assignee: Qimonda AG
- Current Assignee Address: DE Munich
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
An integrated circuit including a storage capacitor suitable for use in a DRAM cell, as well as to a method of manufacturing such a storage capacitor is disclosed. The storage capacitor is formed at least partially above a semiconductor substrate surface. The invention also includes a memory array employing the storage capacitor.
Public/Granted literature
- US20080001201A1 STORAGE CAPACITOR AND METHOD OF MANUFACTURING A STORAGE CAPACITOR Public/Granted day:2008-01-03
Information query
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