Invention Grant
- Patent Title: Nitride semiconductor device and method for producing nitride semiconductor device
- Patent Title (中): 氮化物半导体器件及其制造方法
-
Application No.: US12344351Application Date: 2008-12-26
-
Publication No.: US08093627B2Publication Date: 2012-01-10
- Inventor: Hirotaka Otake , Kentaro Chikamatsu
- Applicant: Hirotaka Otake , Kentaro Chikamatsu
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, PC
- Priority: JP2007-340214 20071228
- Main IPC: H01L29/205
- IPC: H01L29/205 ; H01L29/78 ; H01L21/336
Abstract:
This nitride semiconductor device comprises: an n-type first layer made of a group III nitride semiconductor; a p-type second layer made of a group III nitride semiconductor layer provided on the first layer; and an n-type third layer made of a group III nitride semiconductor with a p-type impurity content of not more than 1×1018 cm−3 provided on the second layer.
Public/Granted literature
- US20090179227A1 NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR DEVICE Public/Granted day:2009-07-16
Information query
IPC分类:
