Invention Grant
US08093579B2 Semiconductor chip having a reduced band offset in its p-doped region and method for producing the semiconductor chip
有权
在其p掺杂区域中具有减小的带偏移的半导体芯片和用于制造半导体芯片的方法
- Patent Title: Semiconductor chip having a reduced band offset in its p-doped region and method for producing the semiconductor chip
- Patent Title (中): 在其p掺杂区域中具有减小的带偏移的半导体芯片和用于制造半导体芯片的方法
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Application No.: US12154552Application Date: 2008-05-23
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Publication No.: US08093579B2Publication Date: 2012-01-10
- Inventor: Bernd Mayer , Wolfgang Schmid
- Applicant: Bernd Mayer , Wolfgang Schmid
- Applicant Address: DE Regensburg
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Cozen O'Connor
- Priority: DE102007023878 20070523
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
A semiconductor chip (1) comprises a p-doped region (I) having a cladding layer (18) and a contact layer (21) between which a first interlayer (19) and a second interlayer (20) are arranged. A concentration of a first material component (B) within the first and the second interlayer (19, 20) changes in such a way that the band gap varies in a range lying between the band gap of the cladding layer (18) and the band gap of the contact layer (21). A method for producing a semiconductor chip of this type is also disclosed.
Public/Granted literature
- US20090010290A1 Semiconductor chip and method for producing a semiconductor chip Public/Granted day:2009-01-08
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