Invention Grant
- Patent Title: Method for determining concentration of impurity element
- Patent Title (中): 测定杂质元素浓度的方法
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Application No.: US11569827Application Date: 2005-06-02
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Publication No.: US08090544B2Publication Date: 2012-01-03
- Inventor: Kiyoshi Nagai , Tetsuo Ishida
- Applicant: Kiyoshi Nagai , Tetsuo Ishida
- Applicant Address: JP Kanagawa
- Assignee: Komatsu Electronic Metals Co., Ltd.
- Current Assignee: Komatsu Electronic Metals Co., Ltd.
- Current Assignee Address: JP Kanagawa
- Agency: Occhiuti Rohlicek & Tsao LLP
- Priority: JP2004-166145 20040603
- International Application: PCT/JP2005/010146 WO 20050602
- International Announcement: WO2005/119229 WO 20051215
- Main IPC: G01N31/00
- IPC: G01N31/00

Abstract:
A method for shortening a waiting time from the setting of a sample in a chamber to the stabilisation of the intensity for a secondary ion for SIMS analysis (mass analysis of the secondary ion) using a raster variation method is provided. By approximating so that the difference between time-lapse variations in intensities of the secondary ions sequentially measured for irradiation densities of two different primary ions becomes constant, a method capable of carrying out an accurate measurement of the concentration of an impurity in consideration of background noise despite time-lapse variations in the intensities of the secondary ions is provided.
Public/Granted literature
- US20090198452A1 METHOD FOR DETERMINING CONCENTRATION OF IMPURITY ELEMENT Public/Granted day:2009-08-06
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