Invention Grant
- Patent Title: Pattern inspection apparatus, pattern inspection method, and manufacturing method of semiconductor device
- Patent Title (中): 图案检查装置,图案检查方法以及半导体装置的制造方法
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Application No.: US12406869Application Date: 2009-03-18
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Publication No.: US08090186B2Publication Date: 2012-01-03
- Inventor: Osamu Nagano
- Applicant: Osamu Nagano
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2008-098320 20080404
- Main IPC: G06K9/00
- IPC: G06K9/00

Abstract:
A pattern inspection method includes: acquiring an image of a pattern; performing matching of CAD data for the pattern and the image; extracting coordinates of a plurality of points on a line segment constituting a polygon figure in the CAD data, to be defined as a first coordinate group; specifying coordinates of edge points in the image corresponding to the plurality of points to be defined as a second coordinate group; calculating differences between the coordinates corresponding to each other from the first and second coordinate group, and calculating statistics each representing a degree of deviation in the matching based on the differences; correct the polygon figure when it is determined that a correction is required as a result of judgment based on the statistics; and inspecting the pattern by comparing the corrected polygon figure with the image.
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